, (jnc. 20 stern ave. springfield, new jersey 07081 u.s.a. irff9230, irff9231, irff9232, irff9233 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 avalanche-energy-rated p-channel power mosfets -3.5 a and -4.0 a, -150 v and -200 v ros(on) = 0.8 fi and 1.2 o feature*: ? single pulse avalanche energy rated ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance terminal diagram the irff9230, irff9231, irff9232 and irff9233 are advanced power mosfets designed, tested, and guaran- teed to withstand a specified level of energy in the breakdown avalanche mode of operation. these are p- channel enhancement-mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the irff-types are supplied in the jedec to-205af (low- profile to-39) metal package. p-channel enhancement mode terminal designation source jedec to-205af absolute-maximum ratings characteristic drain-source voltage 0 vos drain-gate voltage (ro. = 20 ko) 0 vmb continuous drain current id @ tc = 25 c pulsed drain current 0 idm gate-source voltage vga maximum power dissipation pd @ tc = 25 c linear derating factor single-pulse avalanche energy rating 0 ? operating junction and storage temperature _ _ tj, twg range lead temperature irff9230 -200 -200 -4.0 -16 irff9231 -150 -150 -4.0 -16 irff9232 -200 -200 -3.5 -14 irff9233 -150 -150 -3.5 -14 20 25 (see fig. 14) 0.2 (see fig. 14) 500 -55 to +150 300 (0,063 in. (1.6mm) from case lor 10s) units v v- a a v w w/"c mj ?c ?c quality semi-conductors
, ij nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 electrical characteristics, at tc = 25 c (unto* othwwlm specified) chahactcriwc drain-source breakdown voltage bvpw gate threshold voltage vo.lth) gate-source leakage forward lam gate-source leakage reverse low zero-gate voltage drain current ims on-state drain current 0 lo(on) static drain-source on-state rm(on) resistance ? forward tranaconductance (a) g? input capacitance cm output capacitance c... reverse transfer capacitance c*, turn-on delay time won) hue time i, turn-off delay time t?(off) fall time t< total gate charge q0 (gate-source plus gate-drain) gate-source charge q,. gate-drain (("miller") charge q* internal drain inductance ld internal source inductance u junctlon-to-case r?ie junction- to- ambient ftju typk irff9230 irff9232 irff8231 irff9233 all all all all irff9230 irff9231 irff9232 irff9233 irff9230 irff9231 irff9232 irff9233 all all all all all all all all all all all all all all all mm. -zoo -150 -2.0 - - - ? -4.0 -3.5 - - 22 - - - - ? - - - - i_z_ - ? typ. - - - - - - ? - - 0.5 0.8 3.5 550 170 50 30 i 50 50 40 31 18 13 5.0 "ts.o - ? max. - - -4.0 -100 100 -250 -1000 - - 0.8 1.2 ? - _. - 50 100 100 80 45 26 ib 5,0 >75 units v v v na da ha m a a n n s(u) pf pf pf ns na ns na nc nc nc nh ^ik "c/w ?c/w tut condition* v0. = 0 v i0 = -250 //a vm-vm, lo--250/ia va. - -20 v rv,,, = 2ov vm = max. rating, vo. ? 0 v vd? = max. rating x 0.8. va. ? 0 v. tc - 125c vob ~ 10v id" 20a vo, > lo(on) x ros(on) max., id - 2.0 a v? = 0 v voa = -25 v f = 1 0 mhz vod - o.s bvoaa, id = 2.0 a. za = 50 0 s??flg. 17 (mosfet switching times are essentially independent of operating temperature.) vo? ? -15 v, id = -8.0 a, vo> = 0.8 max. rating. 3?e fig. 18 for teat circuit. (gats charge is essentially independent of operating temperature.) measured from the drain modified mosfet lead, 5mm (0.2 in.) symbol showing the from header to center internal device of die. inductances. measuredlrom the / 1 [~7t \e lead, 5mm (0.2 in.) *^\~$3/ from header to source ~^ bonding pad. s typical socket mount. source-drain diode ratinqs amd characteristics continuous source current 1, (body diode) pulse source current )>m (body diode) ? diode forward voltage? v? reverse recovery time t. revert* recovered charge qm forward turn-on time u irff9230 irff9231 irff9232 irff9233 irff9230 irff9231 irff9232 irff9233 irff9230 irff9231 irff9232 irff9233 all all all - - - - - - ? ? - - - - - _ 400 2.6 -4.0 -3.5 -16 -14 -1.5 -1.5 ? ? a a a a v v ns & modified mosfet symbol showing the integral reverse p-n junction rectifier, s tc = 25c, i.--4.0a, vo. = ov to = 25 c, is ? -3.5 a, voi - 0 v tj * 1so*c, ir = -4.0 a, d!p/dt = 100 a/ps tj = 150*c, ir - -4.0 a, dwdt ? 100 a/*s intrinsic turn-on time is negligible. turn-on spaed is substantially controlled by lt + ld. ?tj-25'ctolso-c <5 pulse teat: pulse width < 300 pi. duty cycle 2% 0 repetitive ruing; pulse width limited by max junction temperature see transient thermal impedance curve (fig. 5). ? vno = 50 v, starting tj = 25* c. l - 46.9 mh. r? ? 25 a peek il = 4.0 a (see figs. 15 a 16).
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